A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes
Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes
Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes
Anderson, T. J. (author) / Wang, H. T. (author) / Kang, B. S. (author) / Ren, F. (author) / Pearton, S. J. (author) / Osinsky, A. (author) / Dabiran, A. (author) / Chow, P. P. (author)
APPLIED SURFACE SCIENCE ; 255 ; 2524-2526
2008-01-01
3 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Numerical analysis of gate leakage current in AlGaN Schottky diodes
| British Library Online Contents | 2008
Effect of AlN spacer layer thickness on AlGaN/GaN/Si Schottky barrier diodes
| British Library Online Contents | 2017
High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes
| British Library Online Contents | 2018
Hydrogen Detection with Noble Metal-TiO2 Schottky Diodes
| British Library Online Contents | 2012
Current-voltage analysis of a-Si:H Schottky diodes
| British Library Online Contents | 2006