A platform for research: civil engineering, architecture and urbanism
On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth
On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth
On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth
Desplats, O. (author) / Gallo, P. (author) / Doucet, J. B. (author) / Monier, G. (author) / Bideux, L. (author) / Jalabert, L. (author) / Arnoult, A. (author) / Lacoste, G. (author) / Armand, C. (author) / Voillot, F. (author)
APPLIED SURFACE SCIENCE ; 255 ; 3897-3901
2009-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Improved method for GaAs-(Ga,Al)As epitaxial regrowth
British Library Online Contents | 1993
|Ion Beam Induced Epitaxial Regrowth and Interfacial Amorphization of Compound Semiconductors
British Library Online Contents | 1997
|Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature
British Library Online Contents | 1994
|Implantation damage and epitaxial regrowth of silicon studied by differential reflectometry
British Library Online Contents | 1998
|MBE regrowth of GaAs/AlGaAs structures on RIE patterned substrates
British Library Online Contents | 1993
|