Anomalously High Channel Mobility in SiC-MOSFETs with Al~2O~3/SiO~x/SiC Gate Structure: Fid-Bau Portal

Anomalously High Channel Mobility in SiC-MOSFETs with Al~2O~3/SiO~x/SiC Gate Structure

Hino, S. / Hatayama, T. / Kato, J. / Miura, N. / Oomori, T. / Tokumitsu, E.

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Anomalously High Channel Mobility in SiC-MOSFETs with Al~2O~3/SiO~x/SiC Gate Structure

Hino, S. / Hatayama, T. / Kato, J. / Miura, N. / Oomori, T. / Tokumitsu, E.

Anomalously High Channel Mobility in SiC-MOSFETs with Al~2O~3/SiO~x/SiC Gate Structure

Hino, S. / Hatayama, T. / Kato, J. / Miura, N. / Oomori, T. / Tokumitsu, E.

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Title:

Anomalously High Channel Mobility in SiC-MOSFETs with Al~2O~3/SiO~x/SiC Gate Structure

Contributors:

Hino, S. (author) / Hatayama, T. (author) / Kato, J. (author) / Miura, N. (author) / Oomori, T. (author) / Tokumitsu, E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 683-686

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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