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Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
Yoshiro, H. (author) / Fujimoto, T. (author) / Ohtani, N. (author) / Hoshino, T. (author) / Katsuno, M. (author) / Aigo, T. (author) / Tsuge, H. (author) / Nakabayashi, M. (author) / Hirano, H. (author) / Tatsumi, K. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 819-822
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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