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    Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process

    New search for: Kuroda, K.
    New search for: Matsuno, Y.
    New search for: Ohtsuka, K.I.
    New search for: Yutani, N.
    New search for: Shikama, S.
    New search for: Sumitani, H.

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    Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process

    New search for: Kuroda, K.
    New search for: Matsuno, Y.
    New search for: Ohtsuka, K.I.
    New search for: Yutani, N.
    New search for: Shikama, S.
    New search for: Sumitani, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process

    New search for: Kuroda, K.
    New search for: Matsuno, Y.
    New search for: Ohtsuka, K.I.
    New search for: Yutani, N.
    New search for: Shikama, S.
    New search for: Sumitani, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process

    Contributors:

    Kuroda, K. (author) / Matsuno, Y. (author) / Ohtsuka, K.I. (author) / Yutani, N. (author) / Shikama, S. (author) / Sumitani, H. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 600/603 ; 979-982

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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