A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Normally-Off 4H-SiC Power MOSFET with Submicron Gate
Normally-Off 4H-SiC Power MOSFET with Submicron Gate
Normally-Off 4H-SiC Power MOSFET with Submicron Gate
Yamashita, K. (author) / Egashira, K. (author) / Hashimoto, K. (author) / Takahashi, K. (author) / Kusumoto, O. (author) / Utsunomiya, K. (author) / Hayashi, M. (author) / Uchida, M. (author) / Kudo, C. (author) / Kitabatake, M. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 1115-1118
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
| British Library Online Contents | 2005
Review of technology for normally-off HEMTs with p-GaN gate
| British Library Online Contents | 2018
Review of technology for normally-off HEMTs with p-GaN gate
| British Library Online Contents | 2018
Normally-open overflow drainage gate structure for medium and large flow
European Patent Office | 2020
Normally-open large-flow multi-channel intelligent gate identity verification device
| European Patent Office | 2021