Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer: Fid-Bau Portal

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Zhao, Y.M. / Sun, G.S. / Liu, X.F. / Li, J.Y. / Zhao, W.S. / Wang, L. / Li, J.M. / Zeng, Y.P.

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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Zhao, Y.M. / Sun, G.S. / Liu, X.F. / Li, J.Y. / Zhao, W.S. / Wang, L. / Li, J.M. / Zeng, Y.P.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Zhao, Y.M. / Sun, G.S. / Liu, X.F. / Li, J.Y. / Zhao, W.S. / Wang, L. / Li, J.M. / Zeng, Y.P.

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Title:

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Contributors:

Zhao, Y.M. (author) / Sun, G.S. (author) / Liu, X.F. (author) / Li, J.Y. (author) / Zhao, W.S. (author) / Wang, L. (author) / Li, J.M. (author) / Zeng, Y.P. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 251-254

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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