Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC: Fid-Bau Portal

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC

Matsuhata, H. / Yamaguchi, H. / Nagai, I. / Ohno, T. / Kosugi, R. / Kinoshita, A.

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Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC

Matsuhata, H. / Yamaguchi, H. / Nagai, I. / Ohno, T. / Kosugi, R. / Kinoshita, A.

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC

Matsuhata, H. / Yamaguchi, H. / Nagai, I. / Ohno, T. / Kosugi, R. / Kinoshita, A.

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Document information

Title:

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC

Contributors:

Matsuhata, H. (author) / Yamaguchi, H. (author) / Nagai, I. (author) / Ohno, T. (author) / Kosugi, R. (author) / Kinoshita, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 309-312

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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