Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method: Fid-Bau Portal

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method

Wutimakun, P. / Miyazaki, H. / Okamoto, Y. / Morimoto, J. / Hayashi, T. / Shiomi, H.

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Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method

Wutimakun, P. / Miyazaki, H. / Okamoto, Y. / Morimoto, J. / Hayashi, T. / Shiomi, H.

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method

Wutimakun, P. / Miyazaki, H. / Okamoto, Y. / Morimoto, J. / Hayashi, T. / Shiomi, H.

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Title:

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method

Contributors:

Wutimakun, P. (author) / Miyazaki, H. (author) / Okamoto, Y. (author) / Morimoto, J. (author) / Hayashi, T. (author) / Shiomi, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 521-524

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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