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Activation energies of the acceptor-bound excitons and the donor-acceptor pairs in nitrogen-doped p-type ZnSe, p-type ZnSySe1-y, and p-type Zn1-xMgxSySe1-y epitaxial films grown on GaAs (100) substrates
Activation energies of the acceptor-bound excitons and the donor-acceptor pairs in nitrogen-doped p-type ZnSe, p-type ZnSySe1-y, and p-type Zn1-xMgxSySe1-y epitaxial films grown on GaAs (100) substrates
Activation energies of the acceptor-bound excitons and the donor-acceptor pairs in nitrogen-doped p-type ZnSe, p-type ZnSySe1-y, and p-type Zn1-xMgxSySe1-y epitaxial films grown on GaAs (100) substrates
Kim, H. J. (author) / Kim, B. J. (author) / Kim, T. W. (author) / Yoo, K. H. (author)
APPLIED SURFACE SCIENCE ; 255 ; 5048-5051
2009-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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