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    Excitons bound to nitrogen complexes in heavily doped GaAs1-xNx grown on GaAs misoriented substrates

    New search for: Bousbih, F.
    New search for: Bouzid, S. B.
    New search for: Chtourou, R.
    New search for: Harmand, J. C.

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    Excitons bound to nitrogen complexes in heavily doped GaAs1-xNx grown on GaAs misoriented substrates

    New search for: Bousbih, F.
    New search for: Bouzid, S. B.
    New search for: Chtourou, R.
    New search for: Harmand, J. C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Excitons bound to nitrogen complexes in heavily doped GaAs1-xNx grown on GaAs misoriented substrates

    New search for: Bousbih, F.
    New search for: Bouzid, S. B.
    New search for: Chtourou, R.
    New search for: Harmand, J. C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Title:

    Excitons bound to nitrogen complexes in heavily doped GaAs1-xNx grown on GaAs misoriented substrates

    Contributors:

    Bousbih, F. (author) / Bouzid, S. B. (author) / Chtourou, R. (author) / Harmand, J. C. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 112 ; 50-53

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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