Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template: Fid-Bau Portal

Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template

Lin, C. / Yu, G. / Wang, X. / Cao, M. / Lu, H. / Gong, H. / Qi, M. / Li, A.

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Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template

Lin, C. / Yu, G. / Wang, X. / Cao, M. / Lu, H. / Gong, H. / Qi, M. / Li, A.

Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template

Lin, C. / Yu, G. / Wang, X. / Cao, M. / Lu, H. / Gong, H. / Qi, M. / Li, A.

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Document information

Title:

Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template

Contributors:

Lin, C. (author) / Yu, G. (author) / Wang, X. (author) / Cao, M. (author) / Lu, H. (author) / Gong, H. (author) / Qi, M. (author) / Li, A. (author)

Published in:

MATERIALS LETTERS ; 63 ; 943-945

Publication date:

2009-01-01

Size:

3 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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