Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process: Fid-Bau Portal

Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process

Kang, S. M. / Shin, T. I. / Kim, S. W. / Yoon, D. H.

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Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process

Kang, S. M. / Shin, T. I. / Kim, S. W. / Yoon, D. H.

Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process

Kang, S. M. / Shin, T. I. / Kim, S. W. / Yoon, D. H.

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Check availability in my library

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Document information

Title:

Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process

Contributors:

Kang, S. M. (author) / Shin, T. I. (author) / Kim, S. W. (author) / Yoon, D. H. (author)

Published in:

MATERIALS LETTERS ; 63 ; 1296-1298

Publication date:

2009-01-01

Size:

3 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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