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Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process
Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process
Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process
Kang, S. M. (Autor:in) / Shin, T. I. (Autor:in) / Kim, S. W. (Autor:in) / Yoon, D. H. (Autor:in)
MATERIALS LETTERS ; 63 ; 1296-1298
01.01.2009
3 pages
Aufsatz (Zeitschrift)
Englisch
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