Nitrogen in silicon: Diffusion at 500-750degreeC and interaction with dislocations: Fid-Bau Portal

Nitrogen in silicon: Diffusion at 500-750degreeC and interaction with dislocations

Alpass, C. R. / Murphy, J. D. / Falster, R. J. / Wilshaw, P. R.

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Nitrogen in silicon: Diffusion at 500-750degreeC and interaction with dislocations

Alpass, C. R. / Murphy, J. D. / Falster, R. J. / Wilshaw, P. R.

Nitrogen in silicon: Diffusion at 500-750degreeC and interaction with dislocations

Alpass, C. R. / Murphy, J. D. / Falster, R. J. / Wilshaw, P. R.

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Check availability in my library

Order at Subito €

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Document information

Title:

Nitrogen in silicon: Diffusion at 500-750degreeC and interaction with dislocations

Contributors:

Alpass, C. R. (author) / Murphy, J. D. (author) / Falster, R. J. (author) / Wilshaw, P. R. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 159-160 ; 95-98

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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