Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method: Fid-Bau Portal

Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method

Choi, J.W. / Son, C.H. / Choi, J.M. / Lee, G.S. / Lee, W.J. / Kim, I.S. / Shin, B.C. / Ku, K.R.

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Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method

Choi, J.W. / Son, C.H. / Choi, J.M. / Lee, G.S. / Lee, W.J. / Kim, I.S. / Shin, B.C. / Ku, K.R.

Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method

Choi, J.W. / Son, C.H. / Choi, J.M. / Lee, G.S. / Lee, W.J. / Kim, I.S. / Shin, B.C. / Ku, K.R.

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Document information

Title:

Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method

Contributors:

Choi, J.W. (author) / Son, C.H. (author) / Choi, J.M. (author) / Lee, G.S. (author) / Lee, W.J. (author) / Kim, I.S. (author) / Shin, B.C. (author) / Ku, K.R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 7-10

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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