Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport: Fid-Bau Portal

Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport

Rost, H.-J. / Irmscher, K. / Doerschel, J. / Siche, D. / Schulz, D. / Wollweber, J.

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Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport

Rost, H.-J. / Irmscher, K. / Doerschel, J. / Siche, D. / Schulz, D. / Wollweber, J.

Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport

Rost, H.-J. / Irmscher, K. / Doerschel, J. / Siche, D. / Schulz, D. / Wollweber, J.

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Document information

Title:

Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport

Contributors:

Rost, H.-J. (author) / Irmscher, K. (author) / Doerschel, J. (author) / Siche, D. (author) / Schulz, D. (author) / Wollweber, J. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 91-94

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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