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Critical Issues for MOS Based Power Devices in 4H-SiC

Ryu, S.H. / Dhar, S. / Haney, S.K. / Agarwal, A. / Lelis, A.J. / Geil, B. / Scozzie, C.J.

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Critical Issues for MOS Based Power Devices in 4H-SiC

Ryu, S.H. / Dhar, S. / Haney, S.K. / Agarwal, A. / Lelis, A.J. / Geil, B. / Scozzie, C.J.

Critical Issues for MOS Based Power Devices in 4H-SiC

Ryu, S.H. / Dhar, S. / Haney, S.K. / Agarwal, A. / Lelis, A.J. / Geil, B. / Scozzie, C.J.

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Order at Subito €

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Document information

Title:

Critical Issues for MOS Based Power Devices in 4H-SiC

Contributors:

Ryu, S.H. (author) / Dhar, S. (author) / Haney, S.K. (author) / Agarwal, A. (author) / Lelis, A.J. (author) / Geil, B. (author) / Scozzie, C.J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 743-748

Publication date:

2009-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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