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    Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

    New search for: Naik, H.
    New search for: Tang, K.
    New search for: Chow, T.P.

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    Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

    New search for: Naik, H.
    New search for: Tang, K.
    New search for: Chow, T.P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

    New search for: Naik, H.
    New search for: Tang, K.
    New search for: Chow, T.P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

    Contributors:

    Naik, H. (author) / Tang, K. (author) / Chow, T.P. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 615/617 ; 773-776

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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