Prolonged 500 ^oC Operation of 6H-SiC JFET Integrated Circuitry: Fid-Bau Portal

Prolonged 500 ^oC Operation of 6H-SiC JFET Integrated Circuitry

Neudeck, P.G. / Spry, D.J. / Chen, L.Y. / Chang, C.W. / Beheim, G.M. / Okojie, R.S. / Evans, L.J. / Meredith, R.D. / Ferrier, T.L. / Krasowski, M.J.

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Prolonged 500 ^oC Operation of 6H-SiC JFET Integrated Circuitry

Neudeck, P.G. / Spry, D.J. / Chen, L.Y. / Chang, C.W. / Beheim, G.M. / Okojie, R.S. / Evans, L.J. / Meredith, R.D. / Ferrier, T.L. / Krasowski, M.J.

Prolonged 500 ^oC Operation of 6H-SiC JFET Integrated Circuitry

Neudeck, P.G. / Spry, D.J. / Chen, L.Y. / Chang, C.W. / Beheim, G.M. / Okojie, R.S. / Evans, L.J. / Meredith, R.D. / Ferrier, T.L. / Krasowski, M.J.

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Document information

Title:

Prolonged 500 ^oC Operation of 6H-SiC JFET Integrated Circuitry

Contributors:

Neudeck, P.G. (author) / Spry, D.J. (author) / Chen, L.Y. (author) / Chang, C.W. (author) / Beheim, G.M. (author) / Okojie, R.S. (author) / Evans, L.J. (author) / Meredith, R.D. (author) / Ferrier, T.L. (author) / Krasowski, M.J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 929-934

Publication date:

2009-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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