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    Structure and principal electrophysical properties of Ge1 − x -Si x thin films

    New search for: Abbasov, S. M.
    New search for: Agaverdiieva, G. T.
    New search for: Baitsar, A. S.
    New search for: Faradzhova, U. F.
    New search for: Mekhdevi, G. M.

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    Structure and principal electrophysical properties of Ge1 − x -Si x thin films

    New search for: Abbasov, S. M.
    New search for: Agaverdiieva, G. T.
    New search for: Baitsar, A. S.
    New search for: Faradzhova, U. F.
    New search for: Mekhdevi, G. M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Structure and principal electrophysical properties of Ge1 − x -Si x thin films

    New search for: Abbasov, S. M.
    New search for: Agaverdiieva, G. T.
    New search for: Baitsar, A. S.
    New search for: Faradzhova, U. F.
    New search for: Mekhdevi, G. M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Structure and principal electrophysical properties of Ge1 − x -Si x thin films

    Contributors:

    Abbasov, S. M. (author) / Agaverdiieva, G. T. (author) / Baitsar, A. S. (author) / Faradzhova, U. F. (author) / Mekhdevi, G. M. (author)

    Published in:

    SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY C/C OF ELEKTRONNAIA OBRABOTKA MATERIALOV ; 45 ; 161-166

    Publication date:

    2009-01-01

    Size:

    6 pages

    ISSN:

    1068-3755

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44 / 660.297

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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