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    Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

    New search for: Gao, Y.
    New search for: Gong, X.
    New search for: Fang, W.
    New search for: Akihiro, I.

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    Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

    New search for: Gao, Y.
    New search for: Gong, X.
    New search for: Fang, W.
    New search for: Akihiro, I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

    New search for: Gao, Y.
    New search for: Gong, X.
    New search for: Fang, W.
    New search for: Akihiro, I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

    Contributors:

    Gao, Y. (author) / Gong, X. (author) / Fang, W. (author) / Akihiro, I. (author)

    Published in:

    RARE METALS -BEIJING- ENGLISH EDITION ; 28 ; 313-316

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    1001-0521

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  669

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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