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    TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography

    New search for: Lindner, J.K.N.
    New search for: Bahloul-Hourlier, D.
    New search for: Kraus, D.
    New search for: Weinl, M.
    New search for: Melin, T.
    New search for: Stritzker, B.

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    TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography

    New search for: Lindner, J.K.N.
    New search for: Bahloul-Hourlier, D.
    New search for: Kraus, D.
    New search for: Weinl, M.
    New search for: Melin, T.
    New search for: Stritzker, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography

    New search for: Lindner, J.K.N.
    New search for: Bahloul-Hourlier, D.
    New search for: Kraus, D.
    New search for: Weinl, M.
    New search for: Melin, T.
    New search for: Stritzker, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
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    Document information
    Title:

    TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography

    Contributors:

    Lindner, J.K.N. (author) / Bahloul-Hourlier, D. (author) / Kraus, D. (author) / Weinl, M. (author) / Melin, T. (author) / Stritzker, B. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 11 ; 169-174

    Publication date:

    2008-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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