GaN Nanorods Doped by Hydride Vapor-Phase Epitaxy: Optical and Electrical Properties

Kim, H.-M. / Cho, Y.-H. / Kang, T. W. | British Library Online Contents | 2003

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

Wei, T. B. / Duan, R. F. / Wang, J. X. et al. | British Library Online Contents | 2007

Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy

Hu, Q. / Wei, T. / Duan, R. et al. | British Library Online Contents | 2012

Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy

Tien, L. C. / Norton, D. P. / Pearton, S. J. et al. | British Library Online Contents | 2007

Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

Hiramatsu, K. / Matsushima, H. / Shibata, T. et al. | British Library Online Contents | 1999