Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer: Fid-Bau Portal

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

Wei, T. B. / Duan, R. F. / Wang, J. X. / Li, J. M. / Huo, Z. Q. / Ma, P. / Liu, Z. / Zeng, Y. P.

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Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

Wei, T. B. / Duan, R. F. / Wang, J. X. / Li, J. M. / Huo, Z. Q. / Ma, P. / Liu, Z. / Zeng, Y. P.

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

Wei, T. B. / Duan, R. F. / Wang, J. X. / Li, J. M. / Huo, Z. Q. / Ma, P. / Liu, Z. / Zeng, Y. P.

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Title:

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

Contributors:

Wei, T. B. (author) / Duan, R. F. (author) / Wang, J. X. (author) / Li, J. M. (author) / Huo, Z. Q. (author) / Ma, P. (author) / Liu, Z. (author) / Zeng, Y. P. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 7423-7428

Publication date:

2007-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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