A platform for research: civil engineering, architecture and urbanism
Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates
Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates
Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates
Lin, M. H. (author) / Wen, H. C. (author) / Huang, C. Y. (author) / Jeng, Y. R. (author) / Yau, W. H. (author) / Wu, W. F. (author) / Chou, C. P. (author)
APPLIED SURFACE SCIENCE ; 256 ; 3464-3467
2010-01-01
4 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
British Library Online Contents | 1998
|Precipitates in GaN epilayers grown on sapphire substrates
British Library Online Contents | 1998
|Orientation of cracks in AlGaN epilayers with sapphire substrates
British Library Online Contents | 2003
|Nanoindentation Studies Of GaAs/InP Epilayers
British Library Conference Proceedings | 2000
|Soft films on hard substrates - nanoindentation of tungsten films on sapphire substrates
British Library Online Contents | 2001
|