Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates: Fid-Bau Portal

Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates

Wieser, N. / Klose, M. / Scholz, F. / Off, J. / Dutrieux, Y.

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Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates

Wieser, N. / Klose, M. / Scholz, F. / Off, J. / Dutrieux, Y.

Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates

Wieser, N. / Klose, M. / Scholz, F. / Off, J. / Dutrieux, Y.

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Check availability in my library

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Document information

Title:

Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates

Contributors:

Wieser, N. (author) / Klose, M. (author) / Scholz, F. (author) / Off, J. (author) / Dutrieux, Y. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1355-1358

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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