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Effects of SiC buffer layer growth temperature on the residual strain of GaN/SiC/Si thin films

Park, J. H. / Lee, B. T.

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Effects of SiC buffer layer growth temperature on the residual strain of GaN/SiC/Si thin films

Park, J. H. / Lee, B. T.

Effects of SiC buffer layer growth temperature on the residual strain of GaN/SiC/Si thin films

Park, J. H. / Lee, B. T.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Effects of SiC buffer layer growth temperature on the residual strain of GaN/SiC/Si thin films

Contributors:

Park, J. H. (author) / Lee, B. T. (author)

Published in:

MATERIALS LETTERS ; 64 ; 1137-1139

Publication date:

2010-01-01

Size:

3 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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