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    Binary semiconductor In2Te3 for the application of phase-change memory device

    New search for: Zhu, H.
    New search for: Chen, K.
    New search for: Ge, Z.
    New search for: Xu, H.
    New search for: Su, Y.
    New search for: Yin, J.
    New search for: Xia, Y.
    New search for: Liu, Z.

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    Binary semiconductor In2Te3 for the application of phase-change memory device

    New search for: Zhu, H.
    New search for: Chen, K.
    New search for: Ge, Z.
    New search for: Xu, H.
    New search for: Su, Y.
    New search for: Yin, J.
    New search for: Xia, Y.
    New search for: Liu, Z.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Binary semiconductor In2Te3 for the application of phase-change memory device

    New search for: Zhu, H.
    New search for: Chen, K.
    New search for: Ge, Z.
    New search for: Xu, H.
    New search for: Su, Y.
    New search for: Yin, J.
    New search for: Xia, Y.
    New search for: Liu, Z.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Binary semiconductor In2Te3 for the application of phase-change memory device

    Contributors:

    Zhu, H. (author) / Chen, K. (author) / Ge, Z. (author) / Xu, H. (author) / Su, Y. (author) / Yin, J. (author) / Xia, Y. (author) / Liu, Z. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE ; 45 ; 3569-3574

    Publication date:

    2010-01-01

    Size:

    6 pages

    ISSN:

    0022-2461

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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