Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height: Fid-Bau Portal

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

Kinoshita, A. / Ohyanagi, T. / Yatsuo, T. / Fukuda, K. / Okumura, H. / Arai, K.

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Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

Kinoshita, A. / Ohyanagi, T. / Yatsuo, T. / Fukuda, K. / Okumura, H. / Arai, K.

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

Kinoshita, A. / Ohyanagi, T. / Yatsuo, T. / Fukuda, K. / Okumura, H. / Arai, K.

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Title:

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

Contributors:

Kinoshita, A. (author) / Ohyanagi, T. (author) / Yatsuo, T. (author) / Fukuda, K. (author) / Okumura, H. (author) / Arai, K. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G.

Published in:

Silicon Carbide and Related Materials 2009 ; 893-896

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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