Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or phosphorus implantation: Fid-Bau Portal

Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or phosphorus implantation

Bazin, A. E. / Michaud, J. F. / Autret-Lambert, C. / Cayrel, F. / Chassagne, T. / Portail, M. / Zielinski, M. / Collard, E. / Alquier, D.

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Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or phosphorus implantation

Bazin, A. E. / Michaud, J. F. / Autret-Lambert, C. / Cayrel, F. / Chassagne, T. / Portail, M. / Zielinski, M. / Collard, E. / Alquier, D.

Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or phosphorus implantation

Bazin, A. E. / Michaud, J. F. / Autret-Lambert, C. / Cayrel, F. / Chassagne, T. / Portail, M. / Zielinski, M. / Collard, E. / Alquier, D.

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Title:

Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or phosphorus implantation

Contributors:

Bazin, A. E. (author) / Michaud, J. F. (author) / Autret-Lambert, C. (author) / Cayrel, F. (author) / Chassagne, T. (author) / Portail, M. (author) / Zielinski, M. (author) / Collard, E. (author) / Alquier, D. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 171 ; 120-126

Publication date:

2010-01-01

Size:

7 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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