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    Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer

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    Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer

    New search for: Hanafusa, H.
    New search for: Ohta, A.
    New search for: Ashihara, R.
    New search for: Maruyama, K.
    New search for: Mizuno, T.
    New search for: Hayashi, S.
    New search for: Murakami, H.
    New search for: Higashi, S.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer

    New search for: Hanafusa, H.
    New search for: Ohta, A.
    New search for: Ashihara, R.
    New search for: Maruyama, K.
    New search for: Mizuno, T.
    New search for: Hayashi, S.
    New search for: Murakami, H.
    New search for: Higashi, S.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Title:

    Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer

    Contributors:

    Hanafusa, H. (author) / Ohta, A. (author) / Ashihara, R. (author) / Maruyama, K. (author) / Mizuno, T. (author) / Hayashi, S. (author) / Murakami, H. (author) / Higashi, S. (author) / Okumura, H. / Harima, H.

    Published in:

    Silicon Carbide and Related Materials 2013 ; 649-652

    MATERIALS SCIENCE FORUM ; 778/780

    Publication date:

    2014-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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