High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel: Fid-Bau Portal

High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel

Liu, J. / Buchholz, D. B. / Chang, R. P. / Facchetti, A. / Marks, T. J.

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High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel

Liu, J. / Buchholz, D. B. / Chang, R. P. / Facchetti, A. / Marks, T. J.

High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel

Liu, J. / Buchholz, D. B. / Chang, R. P. / Facchetti, A. / Marks, T. J.

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Document information

Title:

High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel

Contributors:

Liu, J. (author) / Buchholz, D. B. (author) / Chang, R. P. (author) / Facchetti, A. (author) / Marks, T. J. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 22 ; 2333-2337

Publication date:

2010-01-01

Size:

5 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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