Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors: Fid-Bau Portal

Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors

Kang, J. / Moon, K. J. / Lee, T. I. / Lee, W. / Myoung, J. M.

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Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors

Kang, J. / Moon, K. J. / Lee, T. I. / Lee, W. / Myoung, J. M.

Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors

Kang, J. / Moon, K. J. / Lee, T. I. / Lee, W. / Myoung, J. M.

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Check availability in my library

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Document information

Title:

Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors

Contributors:

Kang, J. (author) / Moon, K. J. (author) / Lee, T. I. (author) / Lee, W. (author) / Myoung, J. M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 258 ; 3509-3512

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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