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Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy
Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy
Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy
Lee, K. (author) / Oh, M. S. (author) / Mun, S. j. (author) / Lee, K. H. (author) / Ha, T. W. (author) / Kim, J. H. (author) / Park, S. H. (author) / Hwang, C. S. (author) / Lee, B. H. (author) / Sung, M. M. (author)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 22 ; 3260-3265
2010-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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