Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application: Fid-Bau Portal

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

Wang, C. / Zhai, J. / Song, Z. / Shang, F. / Yao, X.

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Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

Wang, C. / Zhai, J. / Song, Z. / Shang, F. / Yao, X.

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

Wang, C. / Zhai, J. / Song, Z. / Shang, F. / Yao, X.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

Contributors:

Wang, C. (author) / Zhai, J. (author) / Song, Z. (author) / Shang, F. (author) / Yao, X. (author)

Published in:

APPLIED SURFACE SCIENCE ; 257 ; 949-953

Publication date:

2010-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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