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Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Zhang, Y. / Feng, J. / Zhang, Z. / Cai, B. / Lin, Y. / Tang, T. a. / Chen, B.

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Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Zhang, Y. / Feng, J. / Zhang, Z. / Cai, B. / Lin, Y. / Tang, T. a. / Chen, B.

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Zhang, Y. / Feng, J. / Zhang, Z. / Cai, B. / Lin, Y. / Tang, T. a. / Chen, B.

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Check availability in my library

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Document information

Title:

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Contributors:

Zhang, Y. (author) / Feng, J. (author) / Zhang, Z. (author) / Cai, B. (author) / Lin, Y. (author) / Tang, T. a. (author) / Chen, B. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 5602-5606

Publication date:

2008-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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