Preparation of CuIn(S~xSe~1~-~x)~2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe~2: Fid-Bau Portal

Preparation of CuIn(S~xSe~1~-~x)~2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe~2

Wang, G. / Cheng, G. / Hu, B. / Wang, X. / Wan, S. / Wu, S. / Du, Z.

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Preparation of CuIn(S~xSe~1~-~x)~2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe~2

Wang, G. / Cheng, G. / Hu, B. / Wang, X. / Wan, S. / Wu, S. / Du, Z.

Preparation of CuIn(S~xSe~1~-~x)~2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe~2

Wang, G. / Cheng, G. / Hu, B. / Wang, X. / Wan, S. / Wu, S. / Du, Z.

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Document information

Title:

Preparation of CuIn(S~xSe~1~-~x)~2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe~2

Contributors:

Wang, G. (author) / Cheng, G. (author) / Hu, B. (author) / Wang, X. (author) / Wan, S. (author) / Wu, S. (author) / Du, Z. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 25 ; 2426-2429

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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