Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition: Fid-Bau Portal

Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

Chiang, C. H. / Chen, K. M. / Wu, Y. H. / Yeh, Y. S. / Lee, W. I. / Chen, J. F. / Lin, K. L. / Hsiao, Y. L. / Huang, W. C. / Chang, E. Y.

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Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

Chiang, C. H. / Chen, K. M. / Wu, Y. H. / Yeh, Y. S. / Lee, W. I. / Chen, J. F. / Lin, K. L. / Hsiao, Y. L. / Huang, W. C. / Chang, E. Y.

Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

Chiang, C. H. / Chen, K. M. / Wu, Y. H. / Yeh, Y. S. / Lee, W. I. / Chen, J. F. / Lin, K. L. / Hsiao, Y. L. / Huang, W. C. / Chang, E. Y.

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Title:

Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

Contributors:

Chiang, C. H. (author) / Chen, K. M. (author) / Wu, Y. H. (author) / Yeh, Y. S. (author) / Lee, W. I. (author) / Chen, J. F. (author) / Lin, K. L. (author) / Hsiao, Y. L. (author) / Huang, W. C. (author) / Chang, E. Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 257 ; 2415-2418

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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