The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition: Fid-Bau Portal

The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition

Zhang, J. / Tian, W. / Wu, F. / Wan, Q. / Wang, Z. / Li, Y. / Dai, J. / Fang, Y. / Wu, Z.

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The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition

Zhang, J. / Tian, W. / Wu, F. / Wan, Q. / Wang, Z. / Li, Y. / Dai, J. / Fang, Y. / Wu, Z.

The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition

Zhang, J. / Tian, W. / Wu, F. / Wan, Q. / Wang, Z. / Li, Y. / Dai, J. / Fang, Y. / Wu, Z.

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Order at Subito €

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Document information

Title:

The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition

Contributors:

Zhang, J. (author) / Tian, W. (author) / Wu, F. (author) / Wan, Q. (author) / Wang, Z. (author) / Li, Y. (author) / Dai, J. (author) / Fang, Y. (author) / Wu, Z. (author)

Published in:

APPLIED SURFACE SCIENCE ; 307 ; 525-532

Publication date:

2014-01-01

Size:

8 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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