Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique

    New search for: Menda, U. D.
    New search for: Ozdemir, O.
    New search for: Tatar, B.
    New search for: Urgen, M.
    New search for: Kutlu, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique

    New search for: Menda, U. D.
    New search for: Ozdemir, O.
    New search for: Tatar, B.
    New search for: Urgen, M.
    New search for: Kutlu, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique

    New search for: Menda, U. D.
    New search for: Ozdemir, O.
    New search for: Tatar, B.
    New search for: Urgen, M.
    New search for: Kutlu, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique

    Contributors:

    Menda, U. D. (author) / Ozdemir, O. (author) / Tatar, B. (author) / Urgen, M. (author) / Kutlu, K. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 13 ; 257-266

    Publication date:

    2010-01-01

    Size:

    10 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Electronic structure of stressed CrSi2

    Krivosheeva, A. V. / Shaposhnikov, V. L. / Borisenko, V. E. | British Library Online Contents | 2003

    Effect of Substrate Bias Voltage on the Microstructural and Mechanical Properties of TiN-Coated HSS Synthesized by CAPVD Technique

    Mubarak, A. / Hamzah, E. / Toff, M. R. M. | British Library Online Contents | 2006

    Structure of thin CrSi2 films on Si(001)

    Filonenko, O. / Falke, M. / Hortenbach, H. et al. | British Library Online Contents | 2004

    CrSi2 films synthesized by high current Cr ion implantation and their physical properties

    Zhu, H. N. / Liu, B. X. | British Library Online Contents | 2000

    Migration of CrSi2 nanocrystals through nanopipes in the silicon cap

    Galkin, N. G. / Dozsa, L. / Chusovitin, E. A. et al. | British Library Online Contents | 2010

    Back to top