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Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique
Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique
Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique
Menda, U. D. (Autor:in) / Ozdemir, O. (Autor:in) / Tatar, B. (Autor:in) / Urgen, M. (Autor:in) / Kutlu, K. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 13 ; 257-266
01.01.2010
10 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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