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Atomistic Simulation of SiC Growth at the SiC(0001)/Si~1~-~XC~x Interface by the Monte Carlo Method
Atomistic Simulation of SiC Growth at the SiC(0001)/Si~1~-~XC~x Interface by the Monte Carlo Method
Atomistic Simulation of SiC Growth at the SiC(0001)/Si~1~-~XC~x Interface by the Monte Carlo Method
Itoh, M. (author) / Uda, T. (author) / Nara, J. (author) / Ohno, T. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
2011-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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