Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Atomistic Simulation of SiC Growth at the SiC(0001)/Si~1~-~XC~x Interface by the Monte Carlo Method
Atomistic Simulation of SiC Growth at the SiC(0001)/Si~1~-~XC~x Interface by the Monte Carlo Method
Atomistic Simulation of SiC Growth at the SiC(0001)/Si~1~-~XC~x Interface by the Monte Carlo Method
Itoh, M. (Autor:in) / Uda, T. (Autor:in) / Nara, J. (Autor:in) / Ohno, T. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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