A platform for research: civil engineering, architecture and urbanism
Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
Piluso, N. (author) / Severino, A. (author) / Camarda, M. (author) / Canino, A. (author) / La Magna, A. (author) / La Via, F. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
2011-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy
British Library Online Contents | 2011
|Physics of Heteroepitaxy and Heterophases
British Library Online Contents | 2002
|Heteroepitaxy of InP on Si Substrates
British Library Online Contents | 1993
|Be-chalcogenides: heteroepitaxy and interface properties
British Library Online Contents | 1998
|SiGe Technology: Heteroepitaxy and High-Speed Microelectronics
British Library Online Contents | 2000
|