Si Nanodot Device Fabricated by Thermal Oxidation and their Applications: Fid-Bau Portal

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications

Takahashi, Y. / Jo, M.Y. / Kaizawa, T. / Kato, Y. / Arita, M. / Fujiwara, A. / Ono, Y. / Inokawa, H. / Choi, J.B.

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Si Nanodot Device Fabricated by Thermal Oxidation and their Applications

Takahashi, Y. / Jo, M.Y. / Kaizawa, T. / Kato, Y. / Arita, M. / Fujiwara, A. / Ono, Y. / Inokawa, H. / Choi, J.B.

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications

Takahashi, Y. / Jo, M.Y. / Kaizawa, T. / Kato, Y. / Arita, M. / Fujiwara, A. / Ono, Y. / Inokawa, H. / Choi, J.B.

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Document information

Title:

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications

Contributors:

Takahashi, Y. (author) / Jo, M.Y. (author) / Kaizawa, T. (author) / Kato, Y. (author) / Arita, M. (author) / Fujiwara, A. (author) / Ono, Y. (author) / Inokawa, H. (author) / Choi, J.B. (author) / Miyazaki, S.

Published in:

Technology Evolution for Silicon Nano-Electronics ; 175-183

KEY ENGINEERING MATERIALS ; 470

Publication date:

2011-01-01

Size:

9 pages

ISSN:

1013-9826

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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