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High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

Yan, Z. / Guo, Y. / Zhang, G. / Liu, J. M.

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High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

Yan, Z. / Guo, Y. / Zhang, G. / Liu, J. M.

High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

Yan, Z. / Guo, Y. / Zhang, G. / Liu, J. M.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

Contributors:

Yan, Z. (author) / Guo, Y. (author) / Zhang, G. (author) / Liu, J. M. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 23 ; 1351-1355

Publication date:

2011-01-01

Size:

5 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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