A platform for research: civil engineering, architecture and urbanism
A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device
A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device
A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device
Hamaizia, Z. (author) / Sengouga, N. (author) / Missous, M. (author) / Yagoub, M.C.E. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 14 ; 89-93
2011-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Very low leakage InGaAs/InAlAs pHEMTs for broadband (300 MHz to 2 GHz) low-noise applications
British Library Online Contents | 2008
|Materials problems for the development of InGaAs/InAlAs HEMT technology
British Library Online Contents | 1993
|I-V anomalies on InAlAs/InGaAs/InP HFETs and deep levels investigations
British Library Online Contents | 2005
|HBV deep mesa etching in InGaAs/InAlAs/AlAs heterostructures on InP substrate
British Library Online Contents | 2005
|Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMTS
British Library Online Contents | 2006
|