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    Very low leakage InGaAs/InAlAs pHEMTs for broadband (300 MHz to 2 GHz) low-noise applications

    New search for: Bouloukou, A.
    New search for: Boudjelida, B.
    New search for: Sobih, A.
    New search for: Boulay, S.
    New search for: Sly, J.
    New search for: Missous, M.

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    Very low leakage InGaAs/InAlAs pHEMTs for broadband (300 MHz to 2 GHz) low-noise applications

    New search for: Bouloukou, A.
    New search for: Boudjelida, B.
    New search for: Sobih, A.
    New search for: Boulay, S.
    New search for: Sly, J.
    New search for: Missous, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Very low leakage InGaAs/InAlAs pHEMTs for broadband (300 MHz to 2 GHz) low-noise applications

    New search for: Bouloukou, A.
    New search for: Boudjelida, B.
    New search for: Sobih, A.
    New search for: Boulay, S.
    New search for: Sly, J.
    New search for: Missous, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Very low leakage InGaAs/InAlAs pHEMTs for broadband (300 MHz to 2 GHz) low-noise applications

    Contributors:

    Bouloukou, A. (author) / Boudjelida, B. (author) / Sobih, A. (author) / Boulay, S. (author) / Sly, J. (author) / Missous, M. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 11 ; 390-393

    Publication date:

    2008-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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