Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1): Fid-Bau Portal

Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)

Wei, M. / Wang, X. / Pan, X. / Xiao, H. / Wang, C. / Hou, Q. / Wang, Z.

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Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)

Wei, M. / Wang, X. / Pan, X. / Xiao, H. / Wang, C. / Hou, Q. / Wang, Z.

Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)

Wei, M. / Wang, X. / Pan, X. / Xiao, H. / Wang, C. / Hou, Q. / Wang, Z.

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Check availability in my library

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Document information

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Document information

Title:

Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)

Contributors:

Wei, M. (author) / Wang, X. (author) / Pan, X. (author) / Xiao, H. (author) / Wang, C. (author) / Hou, Q. (author) / Wang, Z. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 14 ; 97-100

Publication date:

2011-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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